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HUF75617D3

Part No HUF75617D3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 16A IPAK / N-Channel 100 V 16A (Tc) 64W (Tc) Through Hole I-PAK
Sample
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V
Power Dissipation (Max) 64W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 1,110 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874008-HUF75617D3
Ultra Librarian 3D Model Ultra Librarian HUF75617D3 CAD Model

Description

The HUF75617D3 is an N-Channel MOSFET transistor from the UltraFET™ series.

  • Series: UltraFET™
  • Type: N-Channel MOSFET
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 16A @ 25°C
  • On-Resistance (Rds On): 90mOhm @ 16A and 10V
  • Gate Charge (Qg): 39nC @ 20V
  • Input Capacitance (Ciss): 570pF @ 25V
  • Mounting: Through-hole
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Power Dissipation: 64W
  • Operating Temperature: -55°C to 175°C
  • Product Status: Obsolete

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