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Same model may have multiple batches, images only for reference.
HUF75829D3ST Real Image
Same model may have multiple batches, images only for reference.

HUF75829D3ST

Part No HUF75829D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A DPAK
Datasheet
HUF75829D3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 70nC @ 20V
Max Input Capacitance 1080pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044202-HUF75829D3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75829D3ST CAD Model

Description

The HUF75829D3ST N-Channel MOSFET from Fairchild/ON Semiconductor is a high-performance power transistor designed for use in a wide range of applications.

  • Maximum Power Dissipation: 110W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • On-State Resistance: Low
  • Switching Speed: Fast
  • Product Status: Obsolete
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.4278 $62.1390
12+ $10.1975 $122.3700
18+ $9.8787 $177.8166
25+ $9.5599 $238.9975
32+ $9.2412 $295.7184
42+ $8.2860 $348.0120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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