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Same model may have multiple batches, images only for reference.
HUF76645S3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF76645S3S

Part No HUF76645S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A D2PAK
Datasheet
HUF76645S3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 153nC @ 10V
Max Input Capacitance 4400pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 204921-HUF76645S3S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HUF76645S3S CAD Model

Description

The Fairchild/ON Semiconductor HUF76645S3S is a MOSFET.

  • Package: D2PAK (TO-263AB)
  • Power Dissipation: 310W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: Obsolete (EOL)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge: 153nC @ 10V
  • Input Capacitance: 4400pF @ 25V
  • Gate-Source Voltage: ±16V
  • Rds On: 14 mOhm @ 75A, 10V
  • Drive Voltage: 4.5V, 10V

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48+ $2.4347 $116.8656
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176+ $1.9785 $348.2160
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