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Same model may have multiple batches, images only for reference.
HUFA75307D3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75307D3S

Part No HUFA75307D3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 15A DPAK
Datasheet
HUFA75307D3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 20V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044228-HUFA75307D3S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75307D3S CAD Model

Description

The Fairchild/ON Semiconductor 426432 is an N-channel MOSFET with a maximum power dissipation of 45W (Tc) and a drain-source breakdown voltage of 55V.

  • Maximum Power Dissipation: 45W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 15A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 90 mOhm @ 15A, 10V
  • Package: TO-252AA
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Supply and Demand Status: Sufficient

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