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Same model may have multiple batches, images only for reference.
HUFA75639G3 Real Image
Same model may have multiple batches, images only for reference.

HUFA75639G3

Part No HUFA75639G3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 56A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 20V
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1044262-HUFA75639G3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75639G3 CAD Model

Description

The Fairchild/ON Semiconductor HUFA75639G3 is an N-channel MOSFET designed for various electronic applications.

  • Maximum Power Dissipation: 200W (Tc)
  • Mounting: through hole
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 56A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 130nC @ 20V
  • Maximum Input Capacitance: 2000pF @ 25V
  • Maximum Rds On @ Id, Vgs: 25 mOhm @ 56A, 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: TO-247-3
  • Widely used in: various electronic applications

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