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Same model may have multiple batches, images only for reference.
HUFA76413DK8T_F085 Real Image
Same model may have multiple batches, images only for reference.

HUFA76413DK8T_F085

Part No HUFA76413DK8T_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 5.1A 8-SO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5.1A
Maximum Rds On at Id,Vgs 49 mOhm @ 5.1A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 102666-HUFA76413DK8T_F085
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA76413DK8T_F085 CAD Model

Description

The HUFA76413DK8T_F085 is a dual N-channel MOSFET designed for use in high efficiency power conversion applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 5.1A
  • On-Resistance: 49m ohms
  • Manufacturer: Fairchild/ON Semiconductor
  • Popularity: Medium
  • Supply/Demand: Balance

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