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HUFA76419D3ST Fairchild/ON Semiconductor HUFA76419D3ST Real Image
Same model may have multiple batches, images only for reference.
HUFA76419D3ST Fairchild/ON Semiconductor HUFA76419D3ST Real Image
HUFA76419D3ST Fairchild/ON Semiconductor HUFA76419D3ST Real Image
Same model may have multiple batches, images only for reference.

HUFA76419D3ST

Part No HUFA76419D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27.5nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017085-HUFA76419D3ST
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian HUFA76419D3ST CAD Model

Description

The Fairchild/ON Semiconductor HUFA76419D3ST is an N-channel MOSFET.

  • Continuous Drain Current: 20A (Tc)
  • Rds On (Max): 37 mOhm @ 20A, 10V
  • Packaging: Reel-TR
  • Package: TO-252AA
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Power Dissipation: 75W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Recommended for: General-purpose applications

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