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Same model may have multiple batches, images only for reference.
HUFA76429D3ST_F085 Real Image
Same model may have multiple batches, images only for reference.

HUFA76429D3ST_F085

Part No HUFA76429D3ST_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A DPAK
Datasheet
HUFA76429D3ST_F085 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1480pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044286-HUFA76429D3ST_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA76429D3ST_F085 CAD Model

Description

The Fairchild/ON Semiconductor 1044286-HUFA76429D3ST_F085 is an active electronic component that is medium in popularity.

  • Popularity: Medium
  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 20A (Tc)
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 20A, 10V
  • Technology: MOSFET
  • Polarity: N-channel
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 46nC @ 10V
  • Maximum Input Capacitance: 1480pF @ 25V
  • Package Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
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MOQ: 12 pcs
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