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IRFI624BTUFP001

Part No IRFI624BTUFP001
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2.05A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 49W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875144-IRFI624BTUFP001
Ultra Librarian 3D Model Ultra Librarian IRFI624BTUFP001 CAD Model

Description

The 875144-IRFI624BTUFP001 is a N-channel MOSFET transistor used in discrete semiconductor products.

  • Package: Through-hole TO-262-3 Long Leads, I²Pak, TO-262AA
  • Maximum Drain to Source Voltage: 250V
  • Continuous Drain Current: 4.1A @ 25°C
  • Low On-Resistance: 1.1Ohm @ 2.05A and 10V gate-source voltage
  • Gate Charge: 18nC @ 10V
  • Input Capacitance: 450pF @ 25V drain-source voltage
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: Active
  • Packaging: Bulk
  • Pieces in Package: 2,000

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