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Same model may have multiple batches, images only for reference.
IRFM220BTF Real Image
Same model may have multiple batches, images only for reference.

IRFM220BTF

Part No IRFM220BTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.13A SOT-223
Datasheet
IRFM220BTF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 390pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.4W (Ta)
Maximum Rds On at Id,Vgs 800 mOhm @ 570mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 069499-IRFM220BTF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFM220BTF CAD Model

Description

The Fairchild/ON Semiconductor IRFM220BTF is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current at 25°C of 1.13A (Tc).

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 16nC @ 10V
  • Mounting: SOT-223-4 package
  • Maximum Rds On at Id,Vgs: 800 mOhm @ 570mA, 10V
  • Category: discrete semiconductor product
  • Status: obsolete(EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,705 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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