The Fairchild/ON Semiconductor IRFS634B_FP001 is an N-channel MOSFET with a maximum power dissipation of 38W (Tc).

• Power Dissipation: 38W (Tc)
• Mounting Technology: Through-Hole
• Package: TO-220F
• Maximum Drain-Source Breakdown Voltage: 250V
• Continuous Drain Current: 8.1A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 38nC @ 10V
• Maximum Input Capacitance: 1000pF @ 25V
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On @ Id,Vgs: 450 mOhm @ 4.05A, 10V
• Drive Voltage: 10V (Max Rds On, Min Rds On)
• Category: Discrete Semiconductor Products
• Status: Obsolete (EOL)
• Temperature Range: -55°C to 150°C (TJ)
• Packaging: Tube/Rail