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Same model may have multiple batches, images only for reference.
IRFU120ATU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRFU120ATU

Part No IRFU120ATU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.4A IPAK
Datasheet
IRFU120ATU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 480pF @ 25V
Power Dissipation (Max) 2.5W (Ta), 32W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 4.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047196-IRFU120ATU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU120ATU CAD Model

Description

The 1047196-IRFU120ATU is a MOSFET N-Channel discrete semiconductor product with a through-hole mounting, manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation: 2.5W (Ta), 32W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 8.4A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 480pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3172 $58.6820
445+ $0.2603 $115.8335
690+ $0.2522 $174.0180
950+ $0.2441 $231.8950
1,225+ $0.2359 $288.9775
1,640+ $0.2115 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,232 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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