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Same model may have multiple batches, images only for reference.
IRFW510ATM
Same model may have multiple batches, images only for reference.

IRFW510ATM

Part No IRFW510ATM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-263
Continuous Drain Current (ID) 5.6 A
Drain to Source Breakdown Voltage 100 V
Drain to Source Resistance 400 mΩ
Element Configuration Single
Fall Time 18 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 175 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Power Dissipation 3.8 W
Rise Time 14 ns
RoHS Compliant
Turn-Off Delay Time 28 ns
Win Source Part Number 1065595-IRFW510ATM
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFW510ATM CAD Model

Description

The Fairchild/ON Semiconductor electronic component with Win Source Part Number 1065595-IRFW510ATM is a transistor - FETs, MOSFETs - RF with a case/package of TO-263.

  • Mounting: SMD (SMT)
  • Configuration: single element
  • Power Dissipation: 3.8 W
  • Rise Time: 14 ns
  • Fall Time: 18 ns
  • Manufacturer: Fairchild/ON Semiconductor
  • RoHS: compliant
  • Maximum Operating Temperature: 175 °C
  • Minimum Operating Temperature: -55 °C
  • Continuous Drain Current (ID): 5.6 A
  • Drain to Source Breakdown Voltage: 100 V
  • Turn-Off Delay Time: 28 ns
  • Drain to Source Resistance: 400 mΩ
  • Gate to Source Voltage (Vgs): 20 V

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