The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel power MOSFET that is designed for use in discrete semiconductor products. The MOSFET features a drain-source breakdown voltage of 200V, a continuous drain current of 9A @ 25°C, and a maximum power dissipation of 3.13W (Ta) and 72W (Tc). It has a gate-source threshold voltage of 4V @ 250μA and a maximum gate charge of 29nC @ 10V. The device has a maximum Rds On @ Id,Vgs of 400 mOhm @ 4.5A and 10V, and a maximum input capacitance of 720pF @ 25V. The MOSFET is packaged in a D2PAK (TO-263AB) case and is suitable for use in a wide range of applications, including power supplies, motor control, and lighting.