The IRFW840B is a high-voltage N-channel MOSFET manufactured by Fairchild Semiconductor (now ON Semiconductor). This power MOSFET is designed for high-efficiency switching applications and offers excellent performance characteristics such as low on-resistance and fast switching speeds. It is widely used in power supplies, motor control circuits, and lighting applications.

Applications

• Switch-Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Motor Control
• High-Intensity Discharge (HID) Lighting
• Electronic Ballasts

Features

• N-Channel MOSFET
• High Voltage: 500V Drain-Source Voltage (Vds)
• Low On-Resistance: RDS(on) = 0.85 Ohms (typical) at Vgs = 10V
• High Speed Switching
• Avalanche Energy Rated
• Repetitive Avalanche Tested
• TO-247 Package

Benefits

• High Efficiency: Low on-resistance minimizes conduction losses, resulting in improved efficiency in power conversion applications.
• Fast Switching: High-speed switching characteristics reduce switching losses, further enhancing efficiency and allowing for higher operating frequencies.
• Robust Design: Avalanche energy rating and repetitive avalanche testing ensure reliable operation under transient voltage conditions.
• Easy to Use: Standard TO-247 package simplifies mounting and heat sinking.
• Wide Application Range: Suitable for a variety of high-voltage, high-current switching applications.

The IRFW840B's key technical specifications include a continuous drain current (Id) of up to 8A, a pulsed drain current (Idm) of 32A, and a gate-source voltage (Vgs) of ±30V. The TO-247 package offers excellent thermal dissipation, enabling operation at high power levels. This MOSFET is designed to withstand high temperatures, with a maximum junction temperature (Tj) of 150°C. Its robust construction and comprehensive specifications make it a dependable choice for power electronics engineers designing efficient and reliable systems. Detailed datasheets provide comprehensive information on device characteristics, application notes, and design considerations.