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Same model may have multiple batches, images only for reference.
IRL640A Real Image
Same model may have multiple batches, images only for reference.

IRL640A

Part No IRL640A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 56nC @ 5V
Max Input Capacitance 1705pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 9A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 132636-IRL640A
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Motor Drive & Control
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRL640A CAD Model

Description

The Fairchild/ON Semiconductor IRL640A is an N-channel MOSFET electronic component designed for power management, motor drive, and control applications.

  • Power Dissipation: up to 110W (Tc)
  • Continuous Drain Current: 18A (Tc) @ 25°C
  • Maximum Rds On: 180 mOhm @ 9A, 5V
  • Packaging: TO-220AB
  • Temperature Range: -55°C to 150°C (TJ)

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