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Same model may have multiple batches, images only for reference.
ISL9N308AS3ST Real Image
Same model may have multiple batches, images only for reference.

ISL9N308AS3ST

Part No ISL9N308AS3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 164540-ISL9N308AS3ST
Ultra Librarian 3D Model Ultra Librarian ISL9N308AS3ST CAD Model

Description

The 164540-ISL9N308AS3ST is a single N-channel MOSFET belonging to the UltraFET® series.

  • Designed for: discrete semiconductor products such as transistors and FETs
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 75A @ 25°C
  • Maximum On-Resistance (Rds On): 8Ohm @ 75A and 10V
  • Gate-Source Voltage (Vgs) Threshold: 3V @ 250µA
  • Power Dissipation: 100W
  • Mounting: Surface mountable
  • Package: TO-263-3, D²Pak
  • Status: Obsolete
  • Manufacturer: Fairchild/ON Semiconductor

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