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Same model may have multiple batches, images only for reference.
NDB5060L Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

NDB5060L

Part No NDB5060L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 26A D2PAK
Datasheet
NDB5060L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 24nC @ 5V
Max Input Capacitance 840pF @ 30V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 13A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 025148-NDB5060L
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian NDB5060L CAD Model

Description

The Fairchild/ON Semiconductor NDB5060L is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 26A @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 26A @ 25°C
  • Maximum Rds On: 35 mOhm @ 13A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Gate Charge: 24nC @ 5V
  • Input Capacitance: 840pF @ 30V
  • Package: D2PAK (TO-263AB)
  • Operating Temperature Range: -65°C to 175°C (TJ)
  • Supply and Demand: Limited
  • Package Quantity: 800

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125+ $0.9536 $119.2000
190+ $0.9238 $175.5220
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