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NDC652P-NL

Part No NDC652P-NL
Manufacturer Fairchild/ON Semiconductor
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Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 832453-NDC652P-NL
Ultra Librarian 3D Model Ultra Librarian NDC652P-NL CAD Model

Description

The NDC652P-NL is a P-Channel enhancement mode field effect transistor (MOSFET) from Fairchild Semiconductor, now part of ON Semiconductor. This MOSFET is designed for low voltage, high current switching applications. Its key features include a low on-resistance (RDS(on)), which minimizes power loss and improves efficiency in circuits.

Applications:

  • Load Switching: Ideal for switching power to various loads in electronic circuits.
  • Power Management: Used in power management circuits for portable devices and battery-powered systems.
  • DC-DC Conversion: Suitable for DC-DC converters where efficient switching is crucial.
  • Motor Control: Can be employed in low-power motor control applications.
  • Battery Protection: Used in battery protection circuits to prevent overcharging and discharging.

Features:

  • Low RDS(on): Minimizes power loss and improves efficiency.
  • Low Gate Threshold Voltage: Allows for operation with low voltage logic.
  • High Current Capability: Can handle significant current loads.
  • Logic Level Compatible: Can be driven directly by logic circuits.
  • RoHS Compliant: Complies with environmental regulations.

Benefits:

  • Increased Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency.
  • Extended Battery Life: Lower power loss contributes to longer battery life in portable devices.
  • Simplified Circuit Design: Logic level compatibility simplifies interfacing with control circuits.
  • Reliable Performance: Robust design ensures reliable operation in demanding applications.
  • Reduced Heat Generation: Lower power dissipation results in less heat generation.

The NDC652P-NL is typically available in a surface-mount package (e.g., SO-8), making it suitable for automated assembly processes. Its electrical characteristics include a drain-source voltage (VDS) rating of -20V, a continuous drain current (ID) rating of approximately -6.9A, and a gate-source voltage (VGS) rating of ±8V. The static drain-source on-resistance (RDS(on)) is typically around 23 mΩ at VGS = -4.5V. These parameters make it well-suited for a variety of low-voltage, high-current switching applications where efficiency and space are important considerations. The device's thermal resistance is also a key factor in its performance, allowing designers to manage heat dissipation effectively.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $36.1700 $72.3400
4+ $29.6777 $118.7108
7+ $28.7503 $201.2521
9+ $27.8228 $250.4052
11+ $26.8953 $295.8483
15+ $24.1129 $361.6935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,800 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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