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Same model may have multiple batches, images only for reference.
NDS8426 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

NDS8426

Part No NDS8426
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 10.5A 8-SOIC
Datasheet
NDS8426 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 60nC @ 4.5V
Max Input Capacitance 2150pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 10.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 060148-NDS8426
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NDS8426 CAD Model

Description

The Fairchild/ON Semiconductor 258960 is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current @ 25°C: 10.5A (Ta)
  • Maximum Rds On @ Id, Vgs: 13.5 mOhm @ 10.5A, 4.5V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD (SMT) technology
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Input Capacitance: 2150pF @ 10V
  • Power Dissipation: 2.5W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: now obsolete (EOL)
  • Popularity: medium in the market
  • Supply and Demand Status: limited

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