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NDS9952ANL

Part No NDS9952ANL
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (M - N)
Description 008, Plastic Molded, SOIC-8 Pkg, Narrow Body, Dual Die
Sample
Rohs State rohs
ECAD Module
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RoHS Compliant
Win Source Part Number 1081951-NDS9952ANL
Categories OEM Parts(M-N)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NDS9952ANL CAD Model

Description

The NDS9952ANL is a logic-level N-Channel enhancement mode MOSFET designed for various power management and switching applications. Manufactured by Fairchild Semiconductor, now part of ON Semiconductor, this MOSFET is known for its low on-resistance and fast switching speed, making it suitable for efficient power conversion and load switching. Its logic-level gate drive simplifies the design process, particularly in low-voltage systems. The 'A' likely indicates a slight variation or improvement over the base NDS9952NL model.

Applications:

  • DC-DC converters
  • Load switching in portable devices
  • Power management circuits
  • Battery charging systems
  • Motor control applications

Features:

  • Logic-level gate drive: Enables direct interfacing with low-voltage logic circuits.
  • Low on-resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Fast switching speed: Allows for efficient switching operation.
  • Surface mount package: Facilitates automated assembly and compact design.
  • RoHS compliant: Environmentally friendly and complies with industry standards.

Benefits:

  • Increased energy efficiency: Reduces power consumption and extends battery life.
  • Simplified design: Logic-level gate drive reduces the need for external components.
  • Compact solution: Surface mount package enables high-density circuit designs.
  • Improved thermal performance: Low on-resistance minimizes heat generation.
  • Reliable operation: Designed for stable performance in demanding applications.

Additional Details:

The NDS9952ANL is an N-channel enhancement mode MOSFET. Key electrical specifications include drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). The on-resistance (RDS(on)) is a critical parameter, indicating the resistance between the drain and source when the MOSFET is fully turned on, and directly impacts power dissipation. This device is typically available in a SO-8 surface-mount package. The specific RDS(on) value and current rating will vary depending on the gate-source voltage applied. Refer to the datasheet for comprehensive electrical characteristics and operating guidelines. Proper thermal management is important to ensure device reliability at higher current levels. The device’s power dissipation is dependent on ambient temperature and the use of any heat sinking mechanisms. It's important to consult the specific datasheet for NDS9952ANL to identify any specific differences from NDS9952NL.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3130 $57.9050
450+ $0.2576 $115.9200
695+ $0.2495 $173.4025
960+ $0.2414 $231.7440
1,240+ $0.2333 $289.2920
1,660+ $0.2091 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,921 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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