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Same model may have multiple batches, images only for reference.
RFP30N06LE Real Image
Same model may have multiple batches, images only for reference.

RFP30N06LE

Part No RFP30N06LE
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A TO-220AB
Datasheet
RFP30N06LE Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage +10V, -8V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 47 mOhm @ 30A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 062511-RFP30N06LE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RFP30N06LE CAD Model

Description

The Fairchild/ON Semiconductor 062511-RFP30N06LE is an N-Channel MOSFET that can handle a power dissipation of up to 96W (Tc).

  • Package: TO-220AB
  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Maximum Rds On @ Id, Vgs: 47 mOhm @ 30A, 5V
  • Maximum Gate-Source Voltage: +10V, -8V

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