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Same model may have multiple batches, images only for reference.
SFP9Z14 Real Image
Same model may have multiple batches, images only for reference.

SFP9Z14

Part No SFP9Z14
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 665494-SFP9Z14
Ultra Librarian 3D Model Ultra Librarian SFP9Z14 CAD Model

Description

The SFP9Z14 is a P-Channel MOSFET transistor from Fairchild/ON Semiconductor.

  • Application: discrete semiconductor applications, specifically in single FET and MOSFET circuits
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 6.7A
  • On-Resistance: 500mOhm @ 3.4A and 10V Gate-Source
  • Gate-Source Threshold Voltage: 4V
  • Power Dissipation: 38W
  • Package: TO-220-3, through-hole
  • Gate Charge: 11nC @ 10V Gate-Source
  • Input Capacitance: 350pF @ 25V Drain-Source
  • Operating Temperature: -55°C to 175°C

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