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Same model may have multiple batches, images only for reference.
SFW2955TM Real Image
Same model may have multiple batches, images only for reference.

SFW2955TM

Part No SFW2955TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 49W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 540 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 319438-SFW2955TM
Ultra Librarian 3D Model Ultra Librarian SFW2955TM CAD Model

Description

The 319438-SFW2955TM is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 9.4A @ 25°C
  • Maximum On-Resistance (Rds On): 300mOhm @ 4.7A and 10V
  • Gate Charge (Qg): 19 nC @ 10V
  • Input Capacitance (Ciss): 600 pF @ 25V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Mounting Type: Surface Mountable
  • Package: TO-252-3 (DPAK)

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Quantity Unit Price Ext. Price
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155+ $0.7488 $116.0640
240+ $0.7253 $174.0720
330+ $0.7019 $231.6270
430+ $0.6786 $291.7980
570+ $0.6084 $346.7880
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Availability: 17,900 pieces
MOQ: 65 pcs
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