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Same model may have multiple batches, images only for reference.
SI9955DY Real Image
Same model may have multiple batches, images only for reference.

SI9955DY

Part No SI9955DY
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 3A 8-SOIC
Datasheet
SI9955DY Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 130 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 345pF @ 15V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 135867-SI9955DY
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI9955DY CAD Model

Description

The Fairchild/ON Semiconductor 135867-SI9955DY is an obsolete (EOL) dual N-channel FET designed for use in discrete semiconductor products.

  • Drain-source breakdown voltage: 50V
  • Continuous drain current: 3A @ 25°C
  • Gate-source threshold voltage: 1V @ 250μA
  • Maximum gate charge: 30nC @ 10V
  • Maximum input capacitance: 345pF @ 15V
  • Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V
  • Package: 8-SO
  • Maximum power dissipation: 900mW
  • Temperature range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,052 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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