The SSP1N60A is an N-Channel MOSFET transistor in a TO-220-3 package.

• Drain to source voltage (Vdss): 600V
• Continuous drain current (Id): 1A @ 25°C
• Maximum on-resistance (Rds On): 12Ohm @ 500mA and 10V
• Gate threshold voltage (Vgs(th)): 4V @ 250µA
• Maximum power dissipation: 34W
• Gate charge (Qg): 11nC @ 10V
• Input capacitance (Ciss): 190pF @ 25V
• Operating temperature range: -55°C to 150°C
• Mounting: through-hole mounting
• Description: It is an ideal choice for power management and switching applications in various electronic systems.