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SSP4N90A

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Part No	SSP4N90A
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET / N-Channel 900 V 4A (Tc) 120W (Tc) Through Hole TO-220
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Fairchild Semiconductor
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 25 V
Power Dissipation (Max)	120W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	FAIFSCSSP4N90A,2156-SSP4N90A
Standard Package	1
Win Source Part Number	1014772-SSP4N90A
Ultra Librarian 3D Model	Ultra Librarian SSP4N90A CAD Model

Description

The 1014772-SSP4N90A is an N-channel MOSFET transistor from Fairchild Semiconductor, designed for use in discrete semiconductor products.

Drain to Source Voltage (Vdss): 900V
Continuous Drain Current (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 5Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Package Type: Through Hole
Package: TO-220-3

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