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SSR2N60BTM

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Part No	SSR2N60BTM
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Fairchild/ON Semiconductor
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta), 44W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3 (DPAK)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package	2,500 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	341708-SSR2N60BTM
Ultra Librarian 3D Model	Ultra Librarian SSR2N60BTM CAD Model

Alternative Products

Description

The 341708-SSR2N60BTM is a single N-channel MOSFET transistor designed for use in discrete semiconductor products.

Vdss: 600V
Id: 1.8A @ 25°C
Rds On (Max): 5Ohm @ 900mA and 10V
Qg: 17nC @ 10V
Ciss: 490pF @ 25V
Power Dissipation: 2.5W
Package: TO-252-3
Operating Temperature: -55°C to 150°C
Manufacturer: Fairchild/ON Semiconductor
Status: Active

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