The MC74HC30DR2 is a high-speed silicon-gate CMOS 8-input NAND gate. This device operates at speeds comparable to low power Schottky TTL logic, while providing the low power consumption inherent in CMOS integrated circuits. The device is fully specified for operation from 2 V to 6 V. It is used to implement logic functions in digital electronic circuits. The device contains a single 8-input NAND gate.

Applications

• Logic gates
• Address decoding
• Control circuits
• Data processing
• Industrial automation

Features

• High Speed: tPD = 11 ns (typ) at VCC = 5V
• Low Power Dissipation: ICC = 1 μA (max) at TA = 25°C
• High Noise Immunity: VNIH = VNIL = 30 % VCC
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 V to 6 V
• Low Input Current: 1 μA max

Benefits

• Improved system performance due to high-speed operation.
• Reduced power consumption allows for longer battery life and energy savings.
• High noise immunity ensures reliable operation in noisy environments.
• Simplified integration with various logic families.
• Flexible operating voltage allows for use in a variety of applications.

Additional Details

The MC74HC30DR2 is packaged in a SOIC-14 (Small Outline Integrated Circuit) package suitable for surface mount technology. The device is designed to operate over a temperature range of -55°C to +125°C. The output can drive 10 LSTTL loads, providing sufficient drive for most applications. The propagation delay is typically 11 ns at 5V. The extremely low input current ensures minimal loading on the driving circuit. This device finds widespread use in various digital electronic systems where high speed and low power consumption are essential requirements.