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MRF5007

Part No MRF5007
Manufacturer Freescale Semiconductor - NXP
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1080273-MRF5007
Categories OEM Parts(M-N)
Manufacturer Freescale Semiconductor - NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian MRF5007 CAD Model

Description

The MRF5007 is a 12.5 V, 150 MHz RF power transistor designed for high-gain, wideband large signal amplifier applications in the VHF frequency range. Manufactured by Freescale Semiconductor (NXP), this device is optimized for use in radio transmitters, industrial heating, and other RF power applications requiring robust performance and high efficiency.

Applications

  • VHF Radio Transmitters
  • Industrial Heating Equipment
  • Medical RF Systems
  • RF Generators
  • Amateur Radio Amplifiers

Features

  • High Gain: Provides significant amplification for signal boosting.
  • Wideband Capability: Operates efficiently across a broad frequency range.
  • 12.5 V Operation: Designed for standard 12.5 V power supplies.
  • High Efficiency: Minimizes power consumption and heat dissipation.
  • Robust Design: Withstands high VSWR and over-voltage conditions.

Benefits

  • Increased Signal Strength: Enables stronger and clearer signal transmission in radio applications.
  • Reduced Power Consumption: Minimizes energy usage and lowers operating costs.
  • Enhanced System Reliability: Provides stable and consistent performance in demanding environments.
  • Simplified Circuit Design: Reduces the complexity of amplifier designs due to its high gain characteristics.
  • Extended Lifespan: Offers long-term reliability and durability, reducing maintenance costs.

Additional Details

The MRF5007 is typically packaged in a flange-mounted ceramic package for efficient heat dissipation. Its internal matching network simplifies circuit design, allowing for optimal performance with minimal external components. The device is designed to operate over a wide temperature range, ensuring stable performance in various environmental conditions. Key electrical specifications include a minimum gain of 13 dB at 150 MHz and a collector efficiency of approximately 65%. The transistor is also designed to withstand a high VSWR, providing protection against mismatched loads. Careful thermal management is crucial for optimal performance and longevity. Proper heatsinking is required to maintain the device's junction temperature within the specified limits.

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