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MTA3055E

Part No MTA3055E
Manufacturer Freescale Semiconductor - NXP
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1001491-MTA3055E
Categories OEM Parts(M-N)
Manufacturer Freescale Semiconductor - NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian MTA3055E CAD Model

Description

The MTA3055E is a Power MOSFET from Freescale Semiconductor (now NXP). It's designed for high-efficiency switching applications where power density and reliability are critical. This N-channel enhancement mode MOSFET is widely used in power supplies, motor control circuits, and various other industrial and consumer electronics.

Applications

  • Switching Power Supplies: Used as a primary or secondary side switch in AC-DC and DC-DC power supplies.
  • Motor Control: Employed in PWM motor control circuits for efficient speed and torque regulation.
  • DC-DC Converters: Found in voltage regulators and DC-DC converters for mobile devices, automotive systems, and industrial equipment.
  • Lighting Ballasts: Used in electronic ballasts for fluorescent and LED lighting.
  • Uninterruptible Power Supplies (UPS): Critical component in UPS systems for switching between AC and battery power.

Features

  • N-Channel Enhancement Mode: Allows for easy gate driving and simplified circuit design.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, resulting in higher efficiency and reduced heat dissipation.
  • High Avalanche Energy: Provides robustness against voltage transients and inductive kickback.
  • Fast Switching Speed: Enables high-frequency operation, reducing switching losses and improving efficiency.
  • High Current Capability: Capable of handling significant current levels, making it suitable for high-power applications.
  • Thermally Robust Package: Designed for efficient heat dissipation, ensuring reliable operation even at high power levels.

Benefits

  • Improved Efficiency: Low RDS(on) and fast switching speed minimize power losses, leading to higher overall system efficiency.
  • Reduced Heat Dissipation: Lower power losses translate to less heat generation, simplifying thermal management and improving reliability.
  • Enhanced Reliability: High avalanche energy and robust packaging ensure reliable operation in demanding environments.
  • Simplified Circuit Design: N-channel enhancement mode simplifies gate driving and reduces the need for complex drive circuitry.
  • Cost-Effective: Offers a good balance of performance and cost, making it an attractive choice for a wide range of applications.

Technical Specifications (Typical)

While specific values will vary depending on the exact variant (if any), common specifications for similar devices in this family include:

  • Drain-Source Voltage (VDS): 55V - 60V
  • Gate-Source Voltage (VGS): +/- 20V
  • Continuous Drain Current (ID): 30A - 40A
  • RDS(on) at VGS = 10V: Typically less than 0.04 Ohms
  • Operating Temperature Range: -55°C to +175°C
  • Package: TO-220 or similar through-hole package.

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