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2FI200A-060C

Part No 2FI200A-060C
Manufacturer Fuji Electric
Catalog Custom Parts (0 - A)
Description IGBT Power Transistor Modules
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Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1226001-2FI200A-060C
Categories Custom Parts
Manufacturer Fuji Electric
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2FI200A-060C CAD Model

Description

The 2FI200A-060C is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. This module is designed for high-power switching applications, providing efficient and reliable performance in industrial and commercial settings. It features low saturation voltage and high-speed switching characteristics.

Applications

  • Inverter Drives: Used in variable frequency drives (VFDs) for motor control.
  • Welding Machines: Employed in welding equipment for precise control of welding current.
  • Uninterruptible Power Supplies (UPS): Integrated into UPS systems for providing backup power.
  • Induction Heating: Used in induction heating systems for efficient heating of materials.
  • Power Converters: Utilized in various power converter applications for AC-DC and DC-AC conversion.

Features

  • IGBT Module: Combines the advantages of MOSFET and BJT technologies.
  • High Voltage Rating: Suitable for high-voltage applications.
  • Low Saturation Voltage: Minimizes power loss during operation.
  • Fast Switching Speed: Enables efficient and rapid switching performance.
  • Isolated Baseplate: Provides electrical isolation for enhanced safety.

Benefits

  • Efficient Power Switching: Delivers high efficiency in power switching applications.
  • Reliable Performance: Ensures dependable operation in demanding environments.
  • Reduced Power Loss: Low saturation voltage minimizes energy waste.
  • Improved System Performance: Enhances the overall performance of power electronic systems.
  • Enhanced Safety: Isolated baseplate provides added protection.

Technical Specifications

The 2FI200A-060C IGBT module features a collector-emitter voltage (Vces) of 600V, a collector current (Ic) of 200A, and a gate-emitter voltage (Vges) of ±20V. It offers a low saturation voltage (Vce(sat)) to minimize power dissipation and ensures fast switching speeds to enhance efficiency. The module's isolated baseplate is designed for improved thermal management and safety.

This IGBT module is ideal for applications requiring high power and efficient switching. Its robust design and advanced features ensure reliable performance in various industrial applications.

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