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Same model may have multiple batches, images only for reference.
2SK2879-01
Same model may have multiple batches, images only for reference.

2SK2879-01

Part No 2SK2879-01
Manufacturer Fuji Electric
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet; Power; N-ch; Vdss 500V; Rds(on) 0.33 Ohm; Id +/-20A; TO-3P; Pd 150W; Vgs +/-30V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Drain to Source Breakdown Voltage 500 V
Drain to Source Resistance 380 mΩ
Drain to Source Voltage (Vdss) 500 V
Element Configuration Single
Forward Voltage 1.1 V
Gate to Source Voltage (Vgs) 30 V
Height 19.5072 mm
Length 15.494 mm
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 150 W
Resistance 330 mΩ
RoHS Compliant
Turn-Off Delay Time 160 ns
Turn-On Delay Time 20 ns
Width 4.4958 mm
Win Source Part Number 1037738-2SK2879-01
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2879-01 CAD Model

Description

The 2SK2879-01 is a transistor-FET-MOSFET-RF electronic component manufactured by Fuji Electric.

  • Length: 15.494 mm
  • Height: 19.5072 mm
  • Width: 4.4958 mm
  • Drain to source voltage (Vdss): 500 V
  • Forward voltage: 1.1 V
  • Power dissipation: 150 W
  • Resistance: 330 mΩ
  • Configuration: single element configuration
  • Mount type: through-hole mount type
  • RoHS: compliant RoHS
  • Alternative parts: STW14NK50Z, STP14NK50Z, IRFP450APBF, IRF840APBF, IRFB11N50APBF, and STP11NK50Z
  • Supply and demand status: currently in shortage

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