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2SK3549-01

Part No 2SK3549-01
Manufacturer Fuji Electric
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, Power, N-ch, Vdss 900V, Rds(on) 1.08 Ohms, ID+/-40A, TO-247, Pd 270W, VGS+/-30V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-247
Drain to Source Breakdown Voltage 900 V
Drain to Source Resistance 1.4 Ω
Drain to Source Voltage (Vdss) 900 V
Element Configuration Single
Forward Voltage 900 mV
Gate to Source Voltage (Vgs) 30 V
Height 21.4884 mm
Length 15.494 mm
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 270 W
RoHS Compliant
Turn-Off Delay Time 60 ns
Turn-On Delay Time 26 ns
Width 5.0038 mm
Win Source Part Number 1037780-2SK3549-01
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK3549-01 CAD Model

Description

The Fuji Electric 2SK3549-01 is a Fuji Electric MOSFET transistor with a drain to source voltage (Vdss) of 900 V and a forward voltage of 900 mV.

  • Drain to Source Voltage (Vdss): 900 V
  • Forward Voltage: 900 mV
  • Power Dissipation: 270 W
  • Turn-On Delay Time: 26 ns
  • Turn-Off Delay Time: 60 ns
  • Drain to Source Breakdown Voltage: 900 V
  • Drain to Source Resistance: 1.4 Ω
  • Application: RF MOSFETs and FETs
  • Case/Package: TO-247
  • Number of Pins: 3
  • RoHS Compliance: Compliant
  • Operating Temperature Range: -55 °C to 150 °C
  • Element Configuration: Single

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