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BSS8402DWQ-7

Part No BSS8402DWQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 60V/50V
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V, 50V
Continuous Drain Current at 25°C 115mA, 130mA
Maximum Rds On at Id,Vgs 13.5 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Power Dissipation 200mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1024535-BSS8402DWQ-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS8402DWQ-7 CAD Model

Description

Introducing the BSS8402DWQ-7 Dual P-Channel MOSFET by Diodes Incorporated

The BSS8402DWQ-7 is a state-of-the-art dual P-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is housed in a small and efficient SOT-363 package, making it an ideal choice for space-constrained applications.

With its dual P-Channel configuration, the BSS8402DWQ-7 offers a compact solution for applications requiring two MOSFETs. This feature simplifies PCB layout and reduces the overall component count, which is particularly beneficial in portable and battery-powered devices where space and power efficiency are critical.

The BSS8402DWQ-7 boasts a low on-resistance (R<sub>DS(on)) which enhances its efficiency by minimizing power losses during operation. This characteristic ensures that the device remains cool even under high switching frequencies, thereby increasing the reliability and longevity of the product. The low threshold voltage of this MOSFET allows for operation at lower gate drive voltages, making it compatible with low-voltage logic signals and suitable for interfacing with microcontrollers and other logic devices.

Key specifications of the BSS8402DWQ-7 include:

  • Drain-Source Voltage (V<sub>DS): -30V
  • Continuous Drain Current (I<sub>D): -3.7A
  • Power Dissipation (P<sub>D): 1W
  • R<sub>DS(on): 45mΩ at V<sub>GS = -10V

Applications for this versatile component extend across various sectors, including power management, load switch, and battery protection circuits. It is also suitable for use in charge and discharge switches for battery management, DC-DC converters, and other power-related functions in consumer electronics, telecommunications, and computing devices.

Diodes Incorporated ensures that the BSS8402DWQ-7 meets the highest quality and performance standards. The device is RoHS compliant, reflecting the company's commitment to environmental sustainability. With its robust design and advanced features, the BSS8402DWQ-7 is a superb choice for designers seeking a reliable and efficient dual P-Channel MOSFET solution.

For detailed information, including datasheets, technical documentation, and support resources, please visit the Diodes Incorporated official website or contact their customer support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1918 $50.8270
560+ $0.1795 $100.5200
870+ $0.1733 $150.7710
1,245+ $0.1609 $200.3205
1,620+ $0.1547 $250.6140
2,025+ $0.1485 $300.7125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,940 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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