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MB85RC64

Part No MB85RC64
Manufacturer Fujitsu Electronics America, Inc.
Description Memory FRAM 64 K (8 K x 8) Bit I2C
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Manufacturer Fujitsu Electronics America, Inc.
Win Source Part Number 1215718-MB85RC64
Manufacturer Homepage edevice.fujitsu.com/fmd/en/index.html
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MB85RC64 CAD Model

Description

The Fujitsu MB85RC64 is a 64Kbit (8K x 8) FRAM (Ferroelectric Random Access Memory) device. This non-volatile memory offers fast write speeds, high endurance, and low power consumption, making it suitable for a wide range of applications, including data logging, meter reading, and industrial control systems.

Applications:

  • Data logging systems
  • Smart meters
  • Industrial control equipment
  • Medical devices
  • Wearable electronics

Features:

  • 64Kbit (8K x 8) memory organization
  • Fast write speeds
  • High endurance (10 trillion read/write cycles)
  • Low power consumption
  • Non-volatile data storage
  • I2C interface
  • Wide operating voltage range

Benefits:

  • Fast and reliable data storage
  • Long lifespan
  • Reduced power consumption, extending battery life in portable devices
  • Simplified system design with I2C interface
  • Data retention without external power
  • Suitable for harsh environments
  • Improved system performance

Additional Details:

The MB85RC64 FRAM offers several advantages over traditional EEPROM and Flash memory devices. Its fast write speeds allow for real-time data logging without performance bottlenecks. The high endurance rating ensures reliable operation even in applications with frequent write cycles. The device's low power consumption makes it ideal for battery-powered devices. The I2C interface simplifies communication with microcontrollers and other digital devices. Its non-volatile data storage ensures that data is retained even when power is removed.

Specifications: Memory size: 64Kbit (8K x 8), Interface: I2C, Operating voltage: 1.8V to 3.6V, Endurance: 10 trillion read/write cycles, Data retention: 10 years.

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