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G3R45MT17D

Name: G3R45MT17D
Brand: GeneSiC Semiconductor
SKU: 1350562
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	G3R45MT17D
Manufacturer	GeneSiC Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	SIC MOSFET N-CH 61A TO247-3 / N-Channel 1700 V 61A (Tc) 438W (Tc) Through Hole TO-247-3
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	GeneSiC Semiconductor
Series	G3R™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id	2.7V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	182 nC @ 15 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	4523 pF @ 1000 V
Power Dissipation (Max)	438W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	G3R45
Standard Package	30
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1350562-G3R45MT17D
Ultra Librarian 3D Model	Ultra Librarian G3R45MT17D CAD Model

Alternative Products

Description

The G3R™ series SiCFET (Silicon Carbide) N-Channel FET is a powerful electronic component that can handle a maximum power dissipation of 438W (Tc) and has a drain to source voltage (Vdss) of 1700V.

Manufacturer: Unknown
Product Name: G3R45
Maximum Power Dissipation: 438W (Tc)
Drain to Source Voltage (Vdss): 1700V
Mounting Type: Through Hole
Package/Case: TO-247-3
Continuous Drain Current (Id): 61A (Tc)
Rds On (Max): 58mOhm @ 40A, 15V
Input Capacitance (Ciss): 4523 pF @ 1000 V
Gate Charge (Qg): 182 nC @ 15 V

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