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1002

Name: 1002
Brand: Goford Semiconductor
SKU: 538206
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	1002
Manufacturer	Goford Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N100V,RD(MAX)<250M@10V,RD(MAX)<2
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Goford Semiconductor
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2A
Rds On (Max) @ Id, Vgs	250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	387 pF @ 10 V
Power Dissipation (Max)	1.3W
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3
Standard Package	3,000 pcs
MSL Level	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	538206-1002
Ultra Librarian 3D Model	Ultra Librarian 1002 CAD Model

Alternative Products

Description

The 538206-1002 is an N-Channel MOSFET transistor from Goford Semiconductor.

Drain to Source Voltage: 100V
Continuous Drain Current: 2A @ 25°C
Rds On: 250mOhm @ 2A and 10V
Gate-Source Threshold Voltage: 3V @ 250µA
Maximum Power Dissipation: 1.3W
Package: TO-236-3, SC-59, SOT-23-3
Gate Charge: 10nC @ 10V
Input Capacitance: 387pF @ 10V
Maximum Vgs: ±20V
Operating Temperature Range: -55°C to 150°C
MSL Level: 3 (168 hours)
REACH Status: unaffected
HTSUS Code: 8541.29.0095

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