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Part No 2302
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.3A SOT-23
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 27mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 10 V
FET Feature Standard
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Standard Package 3,000 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 850929-2302
Package Cut Tape (CT)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 356 pF @ 10 V
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Ultra Librarian 3D Model Ultra Librarian 2302 CAD Model

Description

The Goford Semiconductor X3S026000B91H-NZ is an N-Channel MOSFET transistor.

  • Vdss: 20V
  • Id: 4.3A @ 25°C
  • Rds On: 27mOhm @ Vgs of 4.5V
  • Package: TO-236-3, SC-59, SOT-23-3
  • Mounting: Surface mount
  • Qg: 10nC
  • Vgs: ±10V
  • Operating Temperature: -55°C to 150°C
  • Status: Active

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