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Same model may have multiple batches, images only for reference.
FQI27P06 Real Image
Same model may have multiple batches, images only for reference.

FQI27P06

Part No FQI27P06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 27A I2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040341-FQI27P06
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQI27P06 CAD Model

Description

The Fairchild/ON Semiconductor 040341-FQI27P06 is a P-channel MOSFET in an I2PAK package.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 27A @ 25°C
  • Rds On (Max): 70 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
  • Gate-Source Voltage (Max): ±25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Max): 43nC @ 10V
  • Input Capacitance (Max): 1400pF @ 25V

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