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BUZ76

Part No BUZ76
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 400 V 3A (Tc) 40W (Tc) Through Hole TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 495 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 85615-BUZ76
Ultra Librarian 3D Model Ultra Librarian BUZ76 CAD Model

Description

BUZ76 N-Channel MOSFET

The BUZ76 offers a superior balance of efficiency and performance. It is expertly constructed to cater to high-demand electronic projects, offering reliable switching in varied environments.

Features and Benefits

  • Superior on-state resistance leading to reduced power loss.
  • Enhanced robustness for diverse operating conditions.
  • Efficient charge-discharge cycles for excellent performance.

Applications

  • High-efficiency lighting solutions.
  • Automotive electronics and controls.
  • Advanced power management circuits.

The BUZ76 is well-suited for a range of modern electronic applications, providing a high-performance solution for inventive technological development.

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