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BUZ76A

Part No BUZ76A
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Standard Package 495 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573801-BUZ76A
Ultra Librarian 3D Model Ultra Librarian BUZ76A CAD Model

Description

The BUZ76A is a N-channel MOSFET designed for discrete semiconductor applications manufactured by Harris Corporation.

  • Drain-to-Source Voltage: 400V
  • Continuous Drain Current: 2.6A
  • Maximum On-Resistance: 2.5Ohm @ 1.5A and 10V gate-to-source voltage
  • Gate Threshold Voltage: 4V @ 1mA
  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0305 $61.8300
140+ $0.8456 $118.3840
215+ $0.8191 $176.1065
295+ $0.7928 $233.8760
380+ $0.7664 $291.2320
505+ $0.6870 $346.9350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,900 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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