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Same model may have multiple batches, images only for reference.
BSO330N02K G
Same model may have multiple batches, images only for reference.

BSO330N02K G

Part No BSO330N02K G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Small Signal MOSFET 20V 4.2A 45 mOhm Single N-Channel SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOIC
Continuous Drain Current (ID) 5.4 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 30 mΩ
Drain to Source Voltage (Vdss) 20 V
Fall Time 2.8 ns
Gate to Source Voltage (Vgs) 12 V
Input Capacitance 730 pF
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.4 W
Min Operating Temperature -55 °C
Nominal Vgs 950 mV
Number of Pins 8
Power Dissipation 2.5 W
Rds On Max 30 mΩ
REACH SVHC No SVHC
Rise Time 16.8 ns
RoHS Compliant
Threshold Voltage 950 mV
Turn-Off Delay Time 13.4 ns
Turn-On Delay Time 7.4 ns
Win Source Part Number 965379-BSO330N02K G
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BSO330N02K G CAD Model

Description

The Infineon Technologies 965379-BSO330N02K G is an N-channel MOSFET transistor designed for RF applications.

  • Mounting Type: SMD (SMT)
  • Packaging: Digi-Reel®
  • Maximum Continuous Drain Current: 5.4 A
  • Drain to Source Breakdown Voltage: 20 V
  • Supply and Demand Status: Short Supply
  • Maximum Power Dissipation: 1.4 W
  • Turn-On Delay Time: 7.4 ns
  • Turn-Off Delay Time: 13.4 ns
  • Rise Time: 16.8 ns
  • Fall Time: 2.8 ns
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Drain to Source Resistance: 30 mΩ
  • Input Capacitance: 730 pF
  • Pins: 8
  • Gate to Source Voltage: 12 V

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