The 599745-HUF75332S3S is an N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from the UltraFET™ series.

• GPTDescription: It is designed for discrete semiconductor applications such as FETs and MOSFETs. This MOSFET has a drain-to-source voltage of 55V and a continuous drain current of 52A @ 25°C. The Rds On (Max) is 19mOhm @ a drain current of 52A and a gate-source voltage of 10V. The gate-source threshold voltage is 4V @ a drain current of 250μA. The power dissipation is 110W @ a case temperature of 25°C. It is mounted using surface mount technology and comes in the TO-263-3, D²Pak package. The gate charge is 85nC @ a gate voltage of 20V. With its high current handling capabilities and low on-resistance, the 599745-HUF75332S3S is a reliable and efficient component in the field of discrete semiconductor applications.