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IRF232

Part No IRF232
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3
Package / Case TO-204AA, TO-3
Standard Package 201 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604238-IRF232
Ultra Librarian 3D Model Ultra Librarian IRF232 CAD Model

Description

The 604238-IRF232 is a N-Channel MOSFET transistor designed for medium power applications.

  • Vdss: 200V
  • Id: 8A @ 25°C
  • Rds On: 600mOhm @ 5A and 10V gate-source voltage (Vgs)
  • Vgs(th): 4V @ 250μA
  • Package: TO-204AA, TO-3
  • Applications: Power supplies, motor control, and lighting systems
  • Power Dissipation: 75W
  • Status: Active
  • Manufacturer: Harris Corporation

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