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Same model may have multiple batches, images only for reference.
IRF331 Samsung
Same model may have multiple batches, images only for reference.

IRF331

Part No IRF331
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 350 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3
Package / Case TO-204AA, TO-3
Standard Package 127 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604273-IRF331
Ultra Librarian 3D Model Ultra Librarian IRF331 CAD Model

Description

The 604273-IRF331 is an N-Channel MOSFET transistor from Harris Corporation.

  • Type: N-Channel MOSFET
  • Vdss: 350 V
  • Id: 5.5A @ 25°C
  • Rds On: 1 Ohm @ 3A and 10V
  • Vgs(th): 4V @ 250μA
  • Power Dissipation: 75W
  • Mounting: Through-hole
  • Package: TO-204AA, TO-3
  • Qg: 35 nC @ 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Active
  • Applications: Power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2975 $51.9000
95+ $1.0646 $101.1370
150+ $1.0313 $154.6950
205+ $0.9981 $204.6105
260+ $0.9648 $250.8480
350+ $0.8650 $302.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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