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Same model may have multiple batches, images only for reference.
IRF542
Same model may have multiple batches, images only for reference.

IRF542

Part No IRF542
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875013-IRF542
Ultra Librarian 3D Model Ultra Librarian IRF542 CAD Model

Description

The IRF542 is a N-channel MOSFET transistor from Harris Corporation.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 25A @ 25°C
  • Maximum On-Resistance (Rds On): 100mOhm @ 17A and 10V gate-source voltage (Vgs)
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Maximum Power Dissipation: 150W
  • Package: TO-220-3
  • Mounting Type: Through Hole
  • Gate Charge (Qg): 59nC @ 10V
  • Input Capacitance (Ciss): 1450pF @ 25V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4712 $58.9000
300+ $0.3869 $116.0700
465+ $0.3742 $174.0030
640+ $0.3627 $232.1280
830+ $0.3500 $290.5000
1,105+ $0.3142 $347.1910
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Availability: 1,910 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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