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Same model may have multiple batches, images only for reference.
IRFP245
Same model may have multiple batches, images only for reference.

IRFP245

Part No IRFP245
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 250 V 14A (Tc) 150W (Tc) Through Hole TO-247
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Rohs State Need to verify
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARIRFP245,2156-IRFP245
Standard Package 1
Win Source Part Number 1214564-IRFP245
Ultra Librarian 3D Model Ultra Librarian IRFP245 CAD Model

Description

The IRFP245 is a single N-channel MOSFET transistor with a maximum power dissipation of 150 W (Tc).

  • Maximum Power Dissipation: 150 W (Tc)
  • Drain-Source Voltage: 250 V
  • Continuous Drain Current: 14A (Tc)
  • Maximum On-State Resistance: 340mOhm @ 10A and 10V gate-source voltage
  • Gate Threshold Voltage: 4V @ 250µA
  • Gate Charge: 59 nC @ 10 V gate-source voltage
  • Input Capacitance: 1300 pF @ 25 V drain-source voltage
  • Manufacturer: Harris Corporation
  • RoHS Status: Non-compliant

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