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Same model may have multiple batches, images only for reference.
RFD20N03SM Real Image
Same model may have multiple batches, images only for reference.

RFD20N03SM

Part No RFD20N03SM
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 701 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 659987-RFD20N03SM
Ultra Librarian 3D Model Ultra Librarian RFD20N03SM CAD Model

Description

The 659987-RFD20N03SM is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss: 30V
  • Id: 20A @ 25°C
  • Rds On (Max): 25mOhm @ 20A and 10V
  • Vgs(th): 4V @ 250μA
  • Mounting: Surface mount
  • Package: TO-252-3, DPak
  • Power Dissipation: 90W @ Tc
  • Product Status: Active
  • Manufacturer: Harris Corporation

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