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Same model may have multiple batches, images only for reference.
RFG50N06LE Intersil Corporation
Same model may have multiple batches, images only for reference.

RFG50N06LE

Part No RFG50N06LE
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Power Dissipation (Max) 142W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 660062-RFG50N06LE
Ultra Librarian 3D Model Ultra Librarian RFG50N06LE CAD Model

Description

The RFG50N06LE is a N-channel MOSFET transistor, designed for use in various electronic applications. Manufactured by Harris Corporation, this MOSFET offers a drain to source voltage (Vdss) of 60V, making it suitable for high voltage applications.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 50A
  • On-Resistance (Rds On): 22mOhm
  • Mounting Type: Through-hole
  • Package: TO-247-3 package
  • Standard Package: 1 pcs
  • Product Status: Active

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